| PART |
Description |
Maker |
| MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation
1M X 16 FLASH 3V PROM, 12 ns, PDSO48
TVS BIDIRECT 600W 48V SMB 16米（2米x 8/1M × 16）位双操
8 PORT MODULAR SWITCH
4 PORT 100MB MULTI-MODE FIBER
BANDWIDTH MANAGER MODULE TP
16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| MX29LV160BBTC-70 MX29LV160BTTC-70 MX29LV160B MX29L |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| 29LV160C MX29LV160C |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| LH28F160S3HB-L13 LH28F160S3R-L13 LH28F160S3HD-L13 |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS |专科| 56PIN |塑料
EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 56PIN |塑料
|
Sharp, Corp.
M.S. Kennedy, Corp.
|
| MX29LV160ATTC-90G |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV160BBTC-70G MX29LV160BBTC-90G MX29LV160BBTI- |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
10A 45V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 60V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 80V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
MICA RoHS Compliant: No
1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 3000
1 A 20 V Schottky Rectifier; Package: SOD-123FL 2 LEAD; No of Pins: 2; Container: Tape and Reel; Qty per Container: 10000
Silver Mica Capacitor; Capacitance:7pF; Capacitance Tolerance: 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:3pF; Capacitance Tolerance: /- 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:8pF; Capacitance Tolerance: /- 0.5pF; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
1A 100V Schottky Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Tape and Reel; Qty per Container: 5000
10A 90V Schottky Rectifier; Package: TO-220AC 2 LEAD; No of Pins: 2; Container: Rail; Qty per Container: 50
10A 100V H-Series Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1,600位[2Mx8/1Mx16] CMOS单电V时仅闪存
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| MX29LV017AXEI-90 MX29LV017A MX29LV017ATC-70 MX29LV |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
|
ETC[ETC]
|
| HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| LH28F160BVHE-BTL90 |
16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M2M位x8/1Mx16)Boot Block 闪速存储器)
|
Sharp Corporation
|
| AT49F1614 AT49F1604T-70CI AT49F1604T-70CC |
x16 Flash EEPROM
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,BGA,48PIN,PLASTIC
|
Atmel
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
